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2SK1880 L , 2SK1880 S
Silicon N Channel MOS FET
Application
DPAK-1
High speed power switching
4
4
Features
* * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator
12
3
2, 4
12
1
3
1. Gate 2. Drain 3. Source 4. Drain
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 600 30 1.5 3.0 1.5 20 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C
2SK1880 L , 2SK1880 S
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
30 -- -- V
--------------------------------------------------------------------------------------
-- -- 2.0 -- -- -- -- 6.5 10 100 3.0 8.0 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
ID = 1 A VGS = 10 V * ID = 1 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30
--------------------------------------------------------------------------------------
0.85 1.4 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 250 55 8 10 25 35 30 0.95 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF / dt = 100 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
-- 350 -- s
--------------------------------------------------------------------------------------
2SK1880 L , 2SK1880 S
Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 10 Drain Current I D (A) 3 1
Maximum Safe Operation Area
10
0 s
10
s
20
1
PW =
O a pe by rea rat R is ion DS lim in (o ite th n) d is
DC O pe ra tio n
m
s
10
s m
0.3 0.1 0.03
(1 o sh t)
(T c
10
=
25 C )
0
50
100
150
Ta = 25C 0.01 0.1 0.3 1 3
10 300 1000
Case Temperature Tc (C)
Drain to Source Voltage V DS (V)
Typical Output Characteristics 2.0 5V Drain Current I D (A) 1.6 1.2 0.8 0.4 4V 10 V Pulse Test Drain Current I D ( A ) 4.5 V 2.0 1.6 1.2 0.8 0.4
Typical Transfer Characteristics Pulse Test VDS = 20 V
VGS = 3.5 V
75C Tc = 25C -25C
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V DS (V)
Gate to Source Voltage V GS (V)
2SK1880 L , 2SK1880 S
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS (on) (V) Pulse Test 16 12 8 4 I D = 1.5 A Static Drain to Source on State Resistance R DS (on) ( ) 20
Static Drain to Source on State Resistance vs. Drain Current 100 50 20 10 5 2 1 0.05 0.1 0.2 VGS = 10 V Pulse Test
1A 0.5 A
0
4
8
12
16
20
0.5
1
2
5
Gate to Source Voltage VGS (V)
Drain Current I D (A)
Static Drain to Source on State Resistance vs. Temperature 20 Static Drain to Source on State Resistance R DS (on) ( ) 16 12 ID = 1 A 8 0.5 A 4 VGS = 10 V Pulse Test Forward Transfer Admittance | yfs | (S) 5 2 1 0.5
Forward Transfer Admittance vs. Drain Current Pulse Test V DS = 20 V Tc = -25C
75C 0.2 0.1 0.05 0.02 0.05 0.1 0.2 25C
-40
0
40
80
120
160
0.5
1
2
Case Temperature Tc (C)
Drain Current I D (A)
2SK1880 L , 2SK1880 S
Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 5000 2000 1000 500 200 100 50 0.1 0.2 1 0.5 1 2 5 10 0 di/dt = 100 A/s VGS = 0 Ta = 25C Pulse Test 1000
Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pF) 100 Coss 10 Crss VGS = 0 f = 1 MHz
10
20
30
40
50
Reverse Drain Current I DR (A)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 1000 I D = 1.5 A 800 600 400 200 VDS VDD = 100 V 250 V 400 V 4 8 12 16 VGS VDD = 100 V 250 V 400 V 16 12 8 4 0 20 20
Switching Characteristics 500 200 100 50 20 10 5 0.1 0.2 tr tf t d (on) t d (off) VGS = 10 V PW = 2 s duty < 1% = VDD = 30 V :
0
Switching Time t (ns)
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I D (A)
2SK1880 L , 2SK1880 S
Reverse Drain Current vs. Source to Drain Voltage 2.0 Reverse Drain Current I DR (A) Pulse Test 1.6 1.2 0.8 0.4 VGS = 10 V 0 V, -5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (A)

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